Silicon Carbide (SiC) Slurries
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Applications
- CMP/lapping of silicon carbide (SiC)
- Polish all surface types (lapped, mechanically polished, or ground) into epi-ready condition
Specifications
| Slurry | Process step | Polishing face best optimized for | Key features | Material removal rate (MRR) |
| Batch tool slurries, AF series, SC1T series |
Batch CMP | Si-face | Industry standard for batch CMP slurries Optimized for batch polishing systems to provide lowest COO and epi-ready surface quality |
1.5 - 2.5 µm/hr |
| Single wafer CMP slurries, CS GS series, SC200 series |
Single wafer CMP | Si-face | Ultra-high removal slurries with low defectivity and epi-ready surface finish Optimized for single-wafer polishers offering market-leading COO on various CMP platforms for 6" and 8" SiC substrates |
8 - 10 µm/hr |
| Poly SiC slurries, SC3000 series |
Bulk and final CMP for poly SiC substrates | Poly SiC | Advanced particle and chemical formulations specifically designed to provide high removal rates and lowest surface roughness on polycrystalline SiC substrates | 2 - 5 µm/hr |
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